| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER
Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
| NESG220034 NESG220034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| NESG240034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| 2SC3935 |
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| 2SC5216 |
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2N5836 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-46
|
MOTOROLA INC
|
| BFG196E6327 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| X3A-BFR505 |
X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
NXP SEMICONDUCTORS
|
| MSC80185 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
STMICROELECTRONICS
|
